To efficiently form a TiSix film of good quality even in the bottom part of a contact hole of large aspect ratio, relating to a semiconductor manufacturing device wherein W is buried in the contact hole on an Si wafer.

For example, an Si wafer set in an L/UL chamber 11 is, in the state of high vacuum, sent to a Ti chamber 21 through a transportation chamber 41. Then, after the Si wafer is heated to 300°C by a heating mechanism, by a plasma CVD method with an Ar gas from a gas line 22 as a carrier gas and a TiCl4 from a gas line 23 as a source gas, Si and Ti are self-aligned, so that a TiSix film is formed in the bottom part of a contact hole. Then, the Si wafer where the TiSix film is formed is, without exposed to air, sent to a W chamber 31 through the transportation chamber 41, for continuous film-forming of W film by selective CVD method.