Title:
METHOD AND DEVICE MONITORING THICKNESS ON THE SPOT USING MULTIPLEX WAVE LENGTH SPECTROMETER DURING CHEMICAL AND MECHANICAL POLISHING
Document Type and Number:
Japanese Patent JPH1177525
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a chemical and mechanical polishing (CMP) technique using a polishing tool and a thickness monitor to obtain the thickness of a substrate layer. SOLUTION: This invention is concerned with a device and a method monitoring the thickness of a substrate on the spot (work site) using a multiplex wave length spectrometer while chemical and mechanical polishing (CMP) is being processed using a polishing tool and a film thickness monitor 250, and an opening is provided for the tool. Monitoring windows 232 and 242 are fixed to the inside of the opening to form a monitoring channel. The film thickness monitor 250 observes the substrate by way of the monitoring channel so as to allow the film thickness supported over the substrate to be thereby indicated. This information is used for determining the finishing point of a CMP process, determining the quantity of removal in the arbitrarily given circumference of the substrate, determining the average quantity of removal over the whole surface of the substrate, determining the deviation of the quantity of removal over the whole surface of the substrate, and for optimizing the quantity of removal and uniformity. The thickness monitor is provided with a spectrometer.
Inventors:
PECEN JIRI
FIELDEN JOHN
CHADDA SAKET
LACOMB JR LLOYD J
JAIRATH RAHUL
KRUSSEL WILBUR C
FIELDEN JOHN
CHADDA SAKET
LACOMB JR LLOYD J
JAIRATH RAHUL
KRUSSEL WILBUR C
Application Number:
JP18677698A
Publication Date:
March 23, 1999
Filing Date:
May 28, 1998
Export Citation:
Assignee:
LAM RES CORP
KLA TENCOR CORP
KLA TENCOR CORP
International Classes:
B24B37/013; B24B49/04; B24D7/12; G01B9/02; G01B11/06; H01L21/304; H01L21/306; H01L21/66; (IPC1-7): B24B37/04; H01L21/304
Attorney, Agent or Firm:
Minoru Nakamura (6 outside)