To prevent the contamination to the utmost extent, with impurities in atmospheric gas, of a silicon melt droplet discharged from a nozzle at the bottom of a melting crucible with impurities.
The gas inlet and outlet 25 and 26 are provided at the lower and upper parts of a high-temperature heating furnace 11, respectively. During the process for production of a granular silicon, the atmospheric gas just beneath the melting crucible 13 is purified by introducing a clean atmospheric gas into the lower part of the furnace 11 through the gas inlet 25 and discharging the gas just beneath the crucible 13 outside the furnace 11 through the gas outlet 26. While keeping such an operation, a silicon melt 17 in the crucible 13 is discharged from the nozzle 15 of the bottom of the crucible into a downcomer 16, and the silicon melt droplet granulated in the downcomer 16 falls therein. A silicon crystal is grown by cooling the droplet during falling by heat radiation to produce a granular silicon.
SAKAI KAZUTOSHI
SUZUKI KAZUYA
ICHIKAWA HIRONOBU
| JPH10273310A | 1998-10-13 | |||
| JP2004000881A | 2004-01-08 | |||
| JP2002531374A | 2002-09-24 | |||
| JP2001060555A | 2001-03-06 | |||
| JPH06349759A | 1994-12-22 |
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