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Title:
METHOD FOR DOPING ZINC OXIDE BASED CRYSTAL
Document Type and Number:
Japanese Patent JP2014045017
Kind Code:
A
Abstract:

To provide a doping method by which stable diffusion excellent in reproducibility can be performed, and diffusion having a uniform in-plane distribution and excellent in controllability can be performed.

A doping method includes the steps of: using carbonate containing a group I element as a constituent element, as a diffusion agent, spraying fine liquid droplets of the solution of the diffusion agent on a ZnO based crystal, and drying the sprayed fine liquid droplets to be firmly fixed, thereby forming a deposition layer of the diffusion agent; and subjecting the ZnO based crystal, on which the deposition layer of the diffusion agent has been formed, to heat treatment and diffusing the group I element in the ZnO based crystal.


Inventors:
SATO YUKA
HORIO TADASHI
Application Number:
JP2012185556A
Publication Date:
March 13, 2014
Filing Date:
August 24, 2012
Export Citation:
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Assignee:
STANLEY ELECTRIC CO LTD
International Classes:
H01L21/385; C30B29/16; C30B31/02; H01L21/225; H01L33/28
Attorney, Agent or Firm:
Patent Business Corporation Lexto International Patent Office



 
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