To obtain a method for dry etching, wherein a laminated film comprising at least a barrier layer and a metal film thereon which is constituted mainly of aluminum is patterned so that a dimensional conversion difference is reduced, with regard to a method for forming a metal wiring on a semiconductor substrate.

A method for dry etching, wherein a mask 18 having a prescribed pattern, is formed on a laminated film comprising at least a metal film 14 constituted mainly of aluminum and barrier layers 12 and 13 thereunder, and the laminated film is etched by using the mask to form a metal wiring on a semiconductor substrate 10. Here, such an etching gas that prevents deposition of an excessive etching product on the sidewall of the mask is used. For this etching gas, a gas containing oxygen atoms is used. For the gas which contains oxygen atoms, and one of oxygen gas, carbon monoxide gas or carbon dioxide gas is used.