Title:
METHOD OF ELECTRON BEAM EXPOSURE
Document Type and Number:
Japanese Patent JP3134857
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To obtain a high overlay accuracy by re-sizing a pattern, based on deviation information between unit exposure regions in a data conversion in an electron beam exposure system, when there is a poor connection occurs due to the lens distortion.
SOLUTION: When no connection part of a hole pattern, etc., is provided on the boundary line of a sub-deflection region under inspection (S11 No), a measured position correction is superposed on a data at each sub-deflection region as it is to end a data conversion (S14). If a line type pattern such as gates exists on the sub-deflection boundary line of the sub-deflection region (S11 Yes), since a pattern exists among a plurality of sub-deflection regions, the positional correction quantity difference between the sub-deflection regions among which the pattern exists is obtd. (S12). A connection part of the pattern existing among the sub-deflection regions is re-sized so as to compensate the position correction quantity (S13).
Inventors:
Kenichi Tokunaga
Application Number:
JP27122698A
Publication Date:
February 13, 2001
Filing Date:
September 25, 1998
Export Citation:
Assignee:
NEC
International Classes:
H01L21/027; G03F7/20; (IPC1-7): H01L21/027; G03F7/20
Domestic Patent References:
| JP9246147A | ||||
| JP10242039A |
Attorney, Agent or Firm:
Yasuyuki Hata
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