Title:
METHOD FOR ELIMINATING PIN HOLE OF SEMICONDUCTOR THIN FILM
Document Type and Number:
Japanese Patent JPH04336471
Kind Code:
A
Abstract:
PURPOSE:To enable a pin hole which is generated at a semiconductor thin film to be eliminated for preventing short-circuiting. CONSTITUTION:A substrate 102 where pin holes 201, 202, and 203 are generated at a transparent electrode 205 and a semiconductor thin film 206 is placed between a pair of electrodes where a voltage is applied within a solvent medium, ultrasonic washing is performed in this state for eliminating a small amount of dust 204 within the pin hole (Fig. (a)), and then a negative resist is coated on a semiconductor surface. Then, light is exposed 209 from an opposite side of the substrate 102 (Fig. (b)). After the negative resist within the pin hole is cured to form an insulator, an upper electrode is formed on an upper surface of the semiconductor thin film 206.
Inventors:
KARIYA TOSHIMITSU
Application Number:
JP13522591A
Publication Date:
November 24, 1992
Filing Date:
May 13, 1991
Export Citation:
Assignee:
CANON KK
International Classes:
H01L31/04; H01L31/10; (IPC1-7): H01L31/04; H01L31/10
Attorney, Agent or Firm:
Wakabayashi Tadashi