Title:
METHOD FOR ETCHING OF SEMICONDUCTOR SUBSTRATE
Document Type and Number:
Japanese Patent JPH04262528
Kind Code:
A
Abstract:
PURPOSE: To etch without almost no damage to a semiconductor substrate by a method wherein the semiconductor substrate is placed in a plasma reaction furnace, and exposed to the plasma containing at least two kinds of specific elements. CONSTITUTION: A substrate, having a protected surface and a non-protected surface, is placed in a plasma reaction furnace. Using a gas of silicon tetrachloride (SiCl4 ) and boron trichloride (BCl3 ), plasma with which the exposed surface of the substrate is etched, is generated. The cubic ratio of the SiCl4 and the BCl3 is maintained at 50%. First a slow and controlled etching speed can be obtained by the new gas system. Second, etching having strong anisotropy, can be obtained by the new gas etching. The advantage of this etching is resulted from the competing reaction of deposition and etching. Side wall is protected by depositing silicon or boron compound.
Inventors:
MAIKERU ESU REBII
SHIYUTEFUAN PII ROJIYAASU
SHIYUTEFUAN PII ROJIYAASU
Application Number:
JP28949091A
Publication Date:
September 17, 1992
Filing Date:
October 09, 1991
Export Citation:
Assignee:
MOTOROLA INC
International Classes:
H01L21/302; H01L21/306; H01L21/3065; H01L33/00; H01S5/183; (IPC1-7): H01L21/302
Domestic Patent References:
| JPS63278338A | 1988-11-16 | |||
| JPS63102251A | 1988-05-07 | |||
| JPS61500821A | 1986-04-24 |
Attorney, Agent or Firm:
Masanori Honjo (1 person outside)