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Title:
METHOD FOR FILLING RECESS, AND PROCESSING DEVICE
Document Type and Number:
Japanese Patent JP2016152351
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a method for filling a recess of a workpiece.SOLUTION: The method includes: forming a first thin film of a semiconductor material along a wall surface defining the recess; next performing vapor phase doping on the first thin film; then annealing the workpiece within a container, thereby forming an epitaxial region corresponding to a crystal of a semiconductor substrate from the semiconductor material of the first thin film without moving the first thin film on which the vapor phase doping has been performed, along a surface of the semiconductor substrate defining the recess; next forming a second thin film of a semiconductor material along the wall surface defining the recess; then annealing the workpiece within the container, thereby further forming an epitaxial region from the semiconductor material of the second thin film that is moved towards a bottom of the recess.SELECTED DRAWING: Figure 1

Inventors:
CHIBA YOICHIRO
YAMADA TAKUMI
SUZUKI DAISUKE
Application Number:
JP2015029732A
Publication Date:
August 22, 2016
Filing Date:
February 18, 2015
Export Citation:
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Assignee:
TOKYO ELECTRON LTD
International Classes:
H01L21/20; H01L21/205
Domestic Patent References:
JP2013026426A2013-02-04
JP2013026426A2013-02-04
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yoshiki Kuroki
Junji Kashiwaoka



 
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