To provide a method for forming carbon nanotubes filling up the openings of such as via holes and grooves for wiring on an object to be treated with the carbon nanotube film at high density.
The object to be treated which has one or a plurality of openings on the surface thereof and a catalytic metal layer formed on the bottom of the openings is prepared (STEP 1), oxygen plasma treatment is performed on the catalytic metal layer (STEP 2), the catalytic metal layer after oxygen plasma treatment is subjected to hydrogen-containing plasma treatment, thereby activating the surface of the catalytic metal layer (STEP 3), and then carbon nanotubes are grown by plasma CVD on the catalytic metal layer, and the openings of the object to be treated are filled up with the carbon nanotubes (STEP 5).
| WO/1997/013885 | WIRING FILM, SPUTTER TARGET FOR FORMING THE WIRING FILM AND ELECTRONIC COMPONENT USING THE SAME |
| WO/2011/061923 | IN-GA-ZN-O TYPE SPUTTERING TARGET |
| WO/2021/194768 | FEATURE FILL WITH NUCLEATION INHIBITION |
SUGIURA MASAHITO
KOIZUMI KENJIRO
KASHIWAGI YUSAKU
| JP2005263564A | 2005-09-29 | |||
| JP2010010297A | 2010-01-14 | |||
| JP2007252970A | 2007-10-04 | |||
| JP2010010297A | 2010-01-14 | |||
| JP2007252970A | 2007-10-04 | |||
| JP2005263564A | 2005-09-29 |
Katsumi Hoshimiya