To provide a method for forming a device isolation film in a semiconductor device capable of improving trench filling characteristics by preventing insulating films formed on side walls where trenches are opposed to each other from mutually contacting to suppress a generation of seam.
The method for forming a device isolation film including a step that provides a semiconductor substrate where the trenches are formed, a step that forms each spacer at the sidewalls of the trenches, a step that fills a part of the trenches by forming a first insulating film so as to allow deposition speeds on the semiconductor substrate at each bottom of the trenches exposed between the spacers to be faster than those on surfaces of the spacers, and a step that forms a second insulating film on the first insulating film so as to allow the trenches to be filled.
JEONG CHEOL MO
KIM JUNG GEUN
KIM SUK JOONG
CHO JONG HYE
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