Title:
METHOD OF FORMING ELECTRIC CONTACTS FOR TUBULAR FURNACE HEATED DIRECTLY
Document Type and Number:
Japanese Patent JPS51131268
Kind Code:
A
Abstract:
An improved tubular oven adapted for use in diffusion processing of semiconductors whose interior walls are comprised of polycrystalline silicon and whose exterior walls are comprised of phosphorous doped silicon. Block electrical contacts are located at opposed ends of such tubular oven and are comprised of conductive metal and graphite. A layer of thermal insulation circumscribes mid regions of such tubular oven.
Inventors:
UORUFUGANGU DEIITSUE
Application Number:
JP4436476A
Publication Date:
November 15, 1976
Filing Date:
April 19, 1976
Export Citation:
Assignee:
SIEMENS AG
International Classes:
F27D11/02; H01L21/22; H05B3/03; H05B3/06; H05B3/08; H05B3/42; H05B3/62; (IPC1-7): F27D11/00; H01L21/22; H05B3/00; H05B3/40
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