To provide a correcting method by which a deposition layer where both an opening end part and a top end part are formed generates no thickness difference, top realize correction of white deface by which a local part does not become very fat and further to provide a correcting method by which a long beam-shaped body can be formed in correction of white defect in a silicon stencil by deposition using focusing ion beams.

When the beam-shaped body is formed at the opening end part of a sample by deposition using a focusing ion beams device, a method for forming a film pattern of a beam shape in which deposition is executed by narrowly limiting an irradiation region of the ion beam to a strip shape from the opening end part, the beam-shaped body is formed by growing the thin deposition layer by successively shifting the irradiation region on a top end direction and then the deposition layer having desired thickness is formed on the thin deposition layer, is adopted.