To provide a resist composition giving excellent solubility to a resist coating on exposure to light particularly at 193 nm wavelength, and to provide a method for forming a fine pattern with excellent contrast by using the resist composition.
The resist composition comprises (a) an acid dissociable functional group-containing polymer, (b) a photo-acid generating agent and (c) a dissolution inhibitor. The dissolution inhibitor (c) consists of a polymer necessarily containing a structural unit derived from at least one kind of monomer (m1) selected from fluorine-containing norbornene derivatives having a moiety expressed by formula (1). In the formula (1), Rf1 and Rf2 may be same or different and each represents a 1-10C fluorine-containing alkyl group which may have an ether bond; X represents F or CF3; and Y1 represents an OH group or an acid dissociable functional group which is dissociated by an acid to change into an OH group. In the method for forming a fine pattern, a fine pattern is formed by using the resist composition.
ISHIKAWA TAKUJI
YOSHIDA TOMOHIRO
| JP2004182796A | 2004-07-02 | |||
| JP2001350265A | 2001-12-21 | |||
| JPH11338153A | 1999-12-10 | |||
| JP2005221960A | 2005-08-18 |
| WO2004035641A1 | 2004-04-29 | |||
| WO2004024787A1 | 2004-03-25 | |||
| WO2003006413A1 | 2003-01-23 | |||
| WO2003007080A1 | 2003-01-23 |
Fumio Akiyama