METHOD OF FORMING FLUORIC RESIN FILM

Title:

METHOD OF FORMING FLUORIC RESIN FILM

Document Type and Number:

Japanese Patent JPH0669190

Kind Code:

A

Abstract:

PURPOSE: To get a fluoric resin film as the insulating film for the wiring layer of a semiconductor element or a multichip module by exposing the photosensitive film on a substrate and developing it, and then, exposing it in fluoric gas atmosphere.

CONSTITUTION: Photosensitive resist OMR 2 is applied on a substrate 1, and is prebaked. Next, OMR2 is exposed to fluoric gas atmosphere so as to form a first insulating film 3. Next, Al is stacked by sputtering, and patterning is performed to form a first Al wiring 4. Next, photosensitive resist OMR 5 is applied and baked, and OMR 5 is exposed and developed using a mask pattern. Next, it is exposed to fluoric gas atmosphere again to get a second insulating film 7. Hereby, an insulating film excellent in induction property and heat resistance can be formed.

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Inventors:

KUDO HIROSHI (JP)

Application Number:

JP22289392A

Publication Date:

March 11, 1994

Filing Date:

August 21, 1992

Export Citation:

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Assignee:

FUJITSU LTD (JP)

International Classes:

C23C14/16; C23C14/06; G03F7/004; G03F7/038; G03F7/09; G03F7/16; G03F7/38; G03F7/40; H01L21/027; H01L21/312; H01L21/768; H01L23/522; (IPC1-7): H01L21/312; C23C14/16; H01L21/027; H01L21/90

Attorney, Agent or Firm:

Aoki Akira (2 outside)

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