Title:
METHOD OF FORMING INSULATION FILM
Document Type and Number:
Japanese Patent JP3178375
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To prevent film peeling by locally varying the F concn. during deposition of an insulation film and lower the moisture absorption by optimizing the F concn.
SOLUTION: For forming an insulation film by a plasma-excited chemical vapor deposition using a compd. having bonded F atoms, the pressure at the vapor phase deposition is controlled for controlling the dissociation of a raw material gas in the plasma. As the dissociation proceeds, radicals having low F content become dominant in the plasma, thereby controlling the F content in the insulation film. This reduces the F content or locally lowers the F content at a surface of the insulation film which contacts other film, thereby reducing the moisture absorption and preventing peeling.
Inventors:
Kazuhiko Endo
Application Number:
JP14487897A
Publication Date:
June 18, 2001
Filing Date:
June 03, 1997
Export Citation:
Assignee:
NEC
International Classes:
H01L21/31; C23C16/26; C23C16/30; C23C16/455; H01L21/312; H01L21/314; H01L21/316; H01L21/48; C23C16/44; (IPC1-7): H01L21/316
Domestic Patent References:
| JP10163192A | ||||
| JP1079384A | ||||
| JP8222557A | ||||
| JP888223A | ||||
| JP10275804A | ||||
| JP10144677A |
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)