Title:
METHOD OF FORMING INTRINSIC GETTERING SITES IN BONDED SUBSTRATE, AND METHOD OF CAPTURING MOVABLE IONS IN SILICON SEMICONDUCTOR SUBSTRATE
Document Type and Number:
Japanese Patent JPH05275429
Kind Code:
A
Abstract:
PURPOSE: To form a large number of intrinsic gettering sites in a bonded silicon substrate by a method wherein, after a numerous nucleation ions are implanted in a first surface of a first silicon substrate and heat treatment is performed, a second substrate is bonded, and a previously determined part of the first silicon substrate is eliminated. CONSTITUTION: When a large number of gettering sites are formed in a bonded silicon substrate, a first silicon substrate 10 having a first surface 12 and a second surface 13 is prepared, and a numerous nucleation ions 14 are implanted in the first surface 12 of the substrate 10. After the substrate 10 is heated, in order that many nucleation sites are formed from the many nucleation ions 14, a second substrate 20 is bonded to the first surface 12 of the first substrate 10. From the second surface 13 of the first silicon substrate 10, a previously determined part 24 is eliminated. Thereby a numerous intrinsic gettering sites are given in the vicinity of the action region of the first silicon substrate 10.
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Inventors:
James W Baker
Application Number:
JP2968293A
Publication Date:
October 22, 1993
Filing Date:
January 27, 1993
Export Citation:
Assignee:
MOTOROLA INCORPORATED
International Classes:
H01L21/02; H01L21/322; H01L27/12; (IPC1-7): H01L21/322; H01L27/12
Attorney, Agent or Firm:
Masanori Honjo (1 person outside)