METHOD OF FORMING MATERIAL LAYER IN SEMICONDUCTOR DEVICE USING LIQUID PHASE DEPOSITION

Japanese Patent JPH05152222

A

PURPOSE: To cut a chemical bond in a precursor, and to dissociate bonded metallic atoms or metallic oxide molecules from each other to form a material layer on semiconductor substrates immersed in a solution, by a method wherein the metal organic precursor fused in a water-free organic solvent is thermally decomposed in liquid phase. CONSTITUTION: A plurality of semiconductor substrates 12 are held in a liquid bath 10, and the substrates 12 are supported by a support member 14 on one side. A heating element 16 is provided on the side parts of the bath 10 and the bottom of the bath 10 and the temperature of a solution in the bath 10 is maintained at a temperature lower than the boiling point of a solvent. The solution is sent in the bath 10 by a recirculating pump 18 via a line 20, a mixing unit 22 and a solution supply unit 24. In an embodiment that a precursor is a solid at room temperature, the solid precursor is distributed on dissolving beds in the unit 22, and the solvent is circulated via these beds to make it possible to obtain a solution of a previously set molar concentration. The substrates 12 are maintained in the solution during a time enough for depositing a material layer of a desired thickness on the surfaces of the substrates 12.

FUAIBERU ESU PINCHIYOFUSUKII

JP8482292A

June 18, 1993

March 06, 1992

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MOTOROLA INC

C01B13/32; C01G1/00; C01G3/00; C01G23/00; C23C18/02; H01L21/208; H01L21/288; H01L39/24; H01L21/314; H01L21/316; (IPC1-7): C01B13/32; C01G1/00; C01G3/00; C01G23/00; H01L21/208

JPS62502609A	1987-10-08
JPS62297493A	1987-12-24
JPS5349972A	1978-05-06

US4340617A

1982-07-20

Yoshiaki Ikeuchi

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