PURPOSE: To enable a thin and high-quality epitaxial growth layer to be formed while control ling a growth layer thickness accurately by forming an intermediate layer of a specific sub stance at a temperature which is lower than a growth temperature and then increasing the temperature to a growth temperature before performing the gaseous phase epitaxial growth of a second semiconductor substance.

CONSTITUTION: A single crystal 3 with a second semiconductor substance which is different from a first substance is allowed to the gaseous phase epitaxial growth on a substrate 1 which consists of a first semiconductor single crystal. Before performing the gaseous phase epitaxial growth of the second semiconductor substance, the first substance, the second sub stance, and an organic metal compound or a halogen compound of a substance which is selected from a group consisting of a mixed substance of the first and second substances and a third semiconductor substance which conforms to a crystal of the substrate crystallographically are absorbed onto the substrate surface from the reaction gas of that raw material. At the same time, an intermediate layer 2 of a substance which is selected by thermal degradation reaction of the absorbed substance is formed. After that, after increas ing the temperature to a specified epitaxial growth temperature, the second semiconductor substance is subjected to gaseous phase epitaxial growth onto an intermediate layer from the reaction gas of that raw material.