To improve productivity and yield and to acquire excellent accuracy of line width.

A pattern forming material 6 for forming barrier patterns is applied with a prescribed film thickness and dried on a plasma display circuit board 1 on which electrode patterns 5 are formed, and masks 7 for the sand- blast are formed over the pattern forming material so that each mask is located between the electrode patterns 5. After that, the sand-blast processing is performed by using the masks 7 for the sand-blast with the surface of the electrode patterns 5 being protected, then the baking is performed finally to obtain a target barrier pattern 9. A pattern of at least 100 μm is obtained by one operation. Since the outline of the patterns of the thick film if formed by the sand-blast processing by using of the masks, the accuracy of line width is improved. Further, since the surface of the electrodes is protected during the sand-blast processing for forming a barrier, the electrodes will not be damaged.