PURPOSE: To provide a plasma generating device with high density and excellent uniformity under high vacuum, thereby improving fine workability and minimizing the damage to a device.
CONSTITUTION: A high frequency power of a first frequency is applied to a sample base and a counter electrode (omitted in the drawing) which are mutually opposed through a plasma generating chamber in a plasma generating device Pa such as a dry etching device. To three electrodes 4, 5, 6 situated on the sides of the plasma generating chamber, a high frequency AC power of a second frequency different from the first frequency which is oscillated by a three-phase magnetron M1 and differed in phase by about 120° is applied through terminals (a), (b), (c) to give Lissajous' motion to the electrons in the plasma generating chamber.
FUKUTO KENJI
TAMAOKI NORIHIKO
OKUNI MITSUHIRO
KUBOTA MASABUMI
NAKAYAMA ICHIRO
