Title:
METHOD FOR GROWING BISMUTH GARNET CRYSTAL
Document Type and Number:
Japanese Patent JPS63233098
Kind Code:
A
Abstract:
PURPOSE:To obtain a thick crystal film by growing bismuth-substituted garnet on an optical garnet substrate while controlling the ratio of Fe2O3/Tb2O3 in the melt in a specified range by using a liq. phase growth method to reduce the deposition of garnet. CONSTITUTION:A starting material corresponding to bismuth-substituted garnet expressed by (BiTb)2(AlGaFe)5O12 is melted. The molar ratio of Fe2O3/Tb2O3 in the melt of the substituted garnet is controlled to 28.5-29.87. An optical garnet substrate is then dipped in the controlled melt, and then pulled up. As a result, bismuth-substituted garnet is grown on the substrate.
Inventors:
MADA JUNJI
Application Number:
JP6416587A
Publication Date:
September 28, 1988
Filing Date:
March 20, 1987
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
C30B19/02; C30B29/28; (IPC1-7): C30B19/02; C30B29/28
Attorney, Agent or Firm:
Aoki Akira