Title:
METHOD FOR LIFTING SILICON SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JP2014125402
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a method for lifting a silicon single crystal that may regulate a resistibility along a lifting direction of the single crystal within an aimed range and that gives the single crystal of the desired resistibility in high yield for producing an n-type silicon single crystal doped with P by a Czochralski process.SOLUTION: While lifting a silicon single crystal 7 with an Al or In wire 9 inserted in a tubular heat-resistance and heat-insulating protection tube 8 hanged down above a raw material silicon melt 4 doped with P in a crucible 2, Al or In is added to the silicon melt 4 by melting and dropping a part of the wire 9 exposed from the lower end of the protection tube 8.
Inventors:
HIKASA MITSUAKI
MINAMI TOSHIRO
KASHIMA KAZUHIKO
MINAMI TOSHIRO
KASHIMA KAZUHIKO
Application Number:
JP2012284815A
Publication Date:
July 07, 2014
Filing Date:
December 27, 2012
Export Citation:
Assignee:
GLOBALWAFERS JAPAN CO LTD
International Classes:
C30B29/06
Domestic Patent References:
| JP2001240485A | 2001-09-04 | |||
| JPH06234592A | 1994-08-23 | |||
| JP2008266093A | 2008-11-06 |
Foreign References:
| WO1987002718A1 | 1987-05-07 |
Attorney, Agent or Firm:
Kinoshita Shigeru
Rie Ishimura
Rie Ishimura