METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE AND SEMICONDUCTOR LAMINATED STRUCTURE

Title:

METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE AND SEMICONDUCTOR LAMINATED STRUCTURE

Document Type and Number:

Japanese Patent JP2009060140

Kind Code:

A

Abstract:

To provide a method for manufacturing a novel epitaxial substrate and semiconductor laminated structure utilizing the same to form a nitride layers group with low dislocation and excellent in crystallinity.

The method for manufacturing the epitaxial substrate includes: a manufacturing step of forming a group-III nitride base layer 2 on preset base material 1; a manufacturing step of forming a group-III nitride layer 3 containing at least Ga on the group-III nitride base layer 2 by an MOCVD method in two stages of the former stage for forming a film and the latter stage for forming the film; and a manufacturing step of forming a group-III nitride interlayer 4 under the lower temperature than the forming temperature of the group-III nitride layer 3, between the former stage and the latter stage for forming the group-III nitride layer 3.

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Inventors:

TANAKA MITSUHIRO
SAKAI MASAHIRO
EGAWA TAKASHI
ISHIKAWA HIROYASU

Application Number:

JP2008297124A

Publication Date:

March 19, 2009

Filing Date:

November 20, 2008

Export Citation:

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