To provide a method for manufacturing an epitaxial wafer which is capable of manufacturing the epitaxial wafer having excellent electric characteristics represented by the pressure resistance characteristics of an insulating oxidized film and stable quality having decreased variations in these characteristics at a low cost with high productivity.

The epitaxial wafer 10 is obtained by this manufacturing method wherein an epitaxial wafer consisting of silicon in which the main surface of a mirror finished surface wafer substrate 1 formed by subjecting a silicon single crystal grown by using a Czochralski method is subjected to baking in a hydrogen atmosphere in such a manner that the particles sized above 0.1 μm on the main surface of the mirror finished surface wafer substrate 1 attain ≤0.1 piece/cm2 and thereafter a silicon epitaxial layer 2 formed by vapor phase growth is formed on the main surface of the mirror finished surface wafer substrate 1.