Title:
二重ゲート構造を有する電界放出素子の製造方法
Document Type and Number:
Japanese Patent JP4469183
Kind Code:
B2
Abstract:
A field emission display with a double gate structure and a method of manufacturing therefor are provided. The field emission display includes a substrate, a cathode layer formed on the substrate, a gate insulating layer which is formed on the substrate and the cathode layer and has a cavity through which part of the cathode layer is exposed, a field emitter provided on the cathode layer exposed on the bottom of the cavity, a first gate layer which is formed in the gate insulating layer and in which a first gate hole having a diameter greater than that of the cavity is formed not to be exposed to an inner surface of the cavity, and a second gate layer which is formed on the gate insulating layer and in which a second gate hole is formed in a portion that corresponds to the cavity.
Inventors:
Lee rain
Anthony
Andrey Zolkanif
Anthony
Andrey Zolkanif
Application Number:
JP2004005528A
Publication Date:
May 26, 2010
Filing Date:
January 13, 2004
Export Citation:
Assignee:
SAMSUNG SDI Co., LTD.
International Classes:
H01J9/02; H01J1/304; H01J9/18; H01L27/148
Domestic Patent References:
| JP2002373570A | ||||
| JP2001167690A | ||||
| JP5242794A | ||||
| JP7029484A |
Attorney, Agent or Firm:
Isono Dozo