METHOD OF MANUFACTURING HIGH PURITY SEMICONDUCTOR MATERIAL AND HIGH PURITY METAL

Title:

METHOD OF MANUFACTURING HIGH PURITY SEMICONDUCTOR MATERIAL AND HIGH PURITY METAL

Document Type and Number:

Japanese Patent JPS5480284

Kind Code:

A

Abstract:

A process for producing high purity semiconductor materials and metals by thermal decomposition of a gaseous compound of said materials, comprising the steps of arranging conductive carrier bodies in electrical current branches in a multi-phase a.c. system, then passing an equal amount of electrical current through each of the branches so as to heat the carrier bodies to deposition temperature, regulating the current in each of the branches so that the same magnitude of current flows through each branch.

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Inventors:

GERUHARUTO BEEENSUKII
YOOZEFU BUARUDEINGAA

Application Number:

JP12744278A

Publication Date:

June 26, 1979

Filing Date:

October 18, 1978

Export Citation:

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Assignee:

WACKER CHEMITRONIC

International Classes:

B01J19/00; C01B31/36; C01B33/035; C30B25/10; C23C16/24; C23C16/46; C30B25/16; H01L21/205; (IPC1-7): B01J17/32; C23C11/00; H01L21/205

Domestic Patent References:

JPS501977A

1975-01-10

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