Title:
METHOD OF MANUFACTURING MEMS TRANSDUCER
Document Type and Number:
Japanese Patent JP2012045659
Kind Code:
A
Abstract:
To prevent warp and damage of a substrate due to internal stress of an insulation layer caused by annealing without increasing an additional step in a manufacturing process of a MEMS transducer.
In order to form a contact hole reaching a first conductive layer and also to form a groove H3 after a first insulation layer, the first conductive layer, a second insulation layer and a second conductive layer are formed, the first insulation layer and the second insulation layer are etched, and thereafter annealing treatment is executed to alleviate stress of the first conductive layer or the second conductive layer.
More Like This:
| JP2004268236 | DIAMOND TOOL AND ITS MANUFACTURING METHOD |
| JP5894875 | Hole formation method |
| JP4926596 | Light deflector and its manufacturing method |
Inventors:
SUZUKI TAMITO
Application Number:
JP2010189341A
Publication Date:
March 08, 2012
Filing Date:
August 26, 2010
Export Citation:
Assignee:
YAMAHA CORP
International Classes:
B81C1/00; H01L29/84; H04R19/04; H04R31/00
Attorney, Agent or Firm:
knowledge partners Patent business corporation
Dai Yoshida
Wataru Iwakami
Dai Yoshida
Wataru Iwakami