Title:
METHOD OF MANUFACTURING MODULE PROVIDED WITH ELECTRIC CONTACT AREA AND MODULE HAVING SEMICONDUCTOR LAYERS AND ACTIVE ZONE
Document Type and Number:
Japanese Patent JP2004235649
Kind Code:
A
Abstract:
To make directly formable an electric contact area on an n-conductive AlGaInP based or AlGaInAs based semiconductor layer.
A method includes: adjusting by epitaxial growth semiconductor layers having the n-conductive AlGaInP based or AlGaInAs based outer layers and an active zone that emits electromagnetic radiation; making an electric contact material having Au and at least one doping substance adhered to the outer layer; and tempering the outer layer. The doping substance used in the step of making the electric contact material adhered to the outer layer contains at least one element selected from the group consisting of Ge, Si, Sn, and Te.
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Inventors:
ILLEK STEFAN
STAUSS PETER
PLOESSL ANDREAS
DIEPOLD GUDRUN
PIETZONKA INES
STEIN WILHELM
WIRTH RALPH
WEGLEITER WALTER
STAUSS PETER
PLOESSL ANDREAS
DIEPOLD GUDRUN
PIETZONKA INES
STEIN WILHELM
WIRTH RALPH
WEGLEITER WALTER
Application Number:
JP2004021828A
Publication Date:
August 19, 2004
Filing Date:
January 29, 2004
Export Citation:
Assignee:
OSRAM OPTO SEMICONDUCTORS GMBH
International Classes:
H01S5/042; H01L33/30; H01L33/40; H01L33/00; (IPC1-7): H01S5/042
Domestic Patent References:
| JPH07263375A | 1995-10-13 | |||
| JP2002217450A | 2002-08-02 | |||
| JP2001339100A | 2001-12-07 | |||
| JPH0537084A | 1993-02-12 | |||
| JPH05121353A | 1993-05-18 | |||
| JPS5439573A | 1979-03-27 | |||
| JPS54153585A | 1979-12-03 | |||
| JP2003008134A | 2003-01-10 |
Attorney, Agent or Firm:
Toshio Yano
Toshiomi Yamazaki
Takuya Kuno
Einzel Felix-Reinhard
Reinhard Einsel
Toshiomi Yamazaki
Takuya Kuno
Einzel Felix-Reinhard
Reinhard Einsel