Title:
METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2003347660
Kind Code:
A
Abstract:
To provide an electrode structure which has a superior ohmic characteristic and high adhesion between the electrode and the backside of a GaN substrate.
It is realized to form an electrode having the superior ohmic characteristic and high adhesion between the electrode and the backside of the GaN substrate by dry etching the backside of the GaN substrate, when the electrode is formed on the backside of the GaN substrate.
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Inventors:
YAMAMOTO HIDEICHIRO
OMI SUSUMU
ITO SHIGETOSHI
TAKATANI KUNIHIRO
KAWAKAMI TOSHIYUKI
OMI SUSUMU
ITO SHIGETOSHI
TAKATANI KUNIHIRO
KAWAKAMI TOSHIYUKI
Application Number:
JP2002156972A
Publication Date:
December 05, 2003
Filing Date:
May 30, 2002
Export Citation:
Assignee:
SHARP KK
International Classes:
H01L33/32; H01L33/40; H01S5/042; H01S5/343; (IPC1-7): H01S5/042; H01L33/00; H01S5/343
Attorney, Agent or Firm:
Takaya Koike (1 person outside)