Title:
METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE, NITRIDE SEMICONDUCTOR SUBSTRATE AND LAMINATED STRUCTURE
Document Type and Number:
Japanese Patent JP2020070229
Kind Code:
A
Abstract:
To improve the crystal quality of a nitride semiconductor substrate.SOLUTION: The method for manufacturing a nitride semiconductor substrate comprises: the step of preparing a base substrate consisting of a group III nitride semiconductor single crystal; the growth inhibition layer formation step of forming in-situ a growth inhibition layer having growth inhibition parts scattered at random over the entire main surface of the base substrate in a vapor phase growth apparatus; a first step of epitaxially growing a group III nitride semiconductor single crystal having a top surface having an exposed (0001) plane on the main surface of the base substrate through the opening of the growth inhibition layer using the vapor phase growth apparatus to form, on the top surface, a plurality of depressions resulting from the growth inhibition layer and formed on an inclination interface except the (0001) plane and gradually expanding the inclination interface as going upward from the main surface of the base substrate to eliminate the (0001) plane from the top surface and grow a first layer having a surface formed of only the inclination interface; and a second step of epitaxially growing a group III nitride semiconductor single crystal on the first layer to eliminate an inclination interface and grow a second layer having a mirror-finished surface.SELECTED DRAWING: Figure 1
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Inventors:
YOSHIDA TAKEHIRO
Application Number:
JP2019027633A
Publication Date:
May 07, 2020
Filing Date:
February 19, 2019
Export Citation:
Assignee:
SCIOCS CO LTD
SUMITOMO CHEMICAL CO
SUMITOMO CHEMICAL CO
International Classes:
C30B29/38; C23C16/02; C23C16/34; C30B33/00; H01L21/205
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Attorney, Agent or Firm:
Fukuoka Masahiro
Hideo Tachibana
Hideo Tachibana