METHOD FOR MANUFACTURING NITRIDE SINGLE CRYSTAL AND MANUFACTURING APPARATUS THEREFOR

Title:

METHOD FOR MANUFACTURING NITRIDE SINGLE CRYSTAL AND MANUFACTURING APPARATUS THEREFOR

Document Type and Number:

Japanese Patent JP3970789

Kind Code:

B2

Abstract:

PROBLEM TO BE SOLVED: To efficiently manufacture a high-quality single crystal with a large diameter and no defect in the process of manufacturing a nitride single crystal by a sublimation method.
SOLUTION: In the method for manufacturing a nitride single crystal by growing on a seed crystal 7 on a susceptor 8 by a sublimation method, the face of the susceptor 8 where the seed crystal 7 is to be stuck is inclined at 0.1 to 2.0° with respect to the horizontal plane. Or the growing plane of the seed crystal 7 is preferably inclined at 0.1 to 0.8° from the crystallographic orientation with respect to the horizontal plane. Further, it is also preferable to dispose the discharge port 6 of the environmental gas in the inclination direction of the susceptor and that the flow F of the sublimated gas is made almost same as the inclination of the surface of the susceptor 8.

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Inventors:

Noboru Ichinose
Kazuo Sanada

Application Number:

JP2003078418A

Publication Date:

September 05, 2007

Filing Date:

March 20, 2003

Export Citation:

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Assignee:

Waseda University
Fujikura Ltd.

International Classes:

C30B29/38; C30B23/00; (IPC1-7): C30B29/38

Domestic Patent References:

JP2000044395A

Attorney, Agent or Firm:

Masatake Shiga
Tadashi Takahashi
Takashi Watanabe
Masakazu Aoyama

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