Title:
METHOD FOR MANUFACTURING NITRIDE SYSTEM III-V GROUP COMPOUND SEMICONDUCTOR
Document Type and Number:
Japanese Patent JP2003257998
Kind Code:
A
Abstract:
To manufacture a nitride system III-V group compound semiconductor device whose crystallinity, electric characteristics and reproducibility are excellent.
A method for manufacturing a nitride system III-V group compound semiconductor device comprises a process for etching an SiC substrate by hydrogen chloride or an inert gas in a hydrogen atmosphere by using SiC as substrate materials, a process for forming an AlN layer on the SiC substrate, a process for forming a GaN layer having resistivity ranging from 1 Ω cm to 1×105 Ω cm on the AlN layer, a process for forming an undoped GaN layer on the GaN layer, a process forming an undoped AlGaN layer on the GaN layer, and a process for forming an Si-doped AlGaN layer on the AlGaN layer.
Inventors:
NANISHI YASUYUKI
TERAGUCHI NOBUAKI
SUZUKI AKIRA
TERAGUCHI NOBUAKI
SUZUKI AKIRA
Application Number:
JP2002054387A
Publication Date:
September 12, 2003
Filing Date:
February 28, 2002
Export Citation:
Assignee:
SHARP KK
RITSUMEIKAN
RITSUMEIKAN
International Classes:
H01L21/302; H01L21/205; H01L21/338; H01L29/778; H01L29/812; (IPC1-7): H01L21/338; H01L21/205; H01L21/302; H01L29/778; H01L29/812
Attorney, Agent or Firm:
Shintaro Nogawa
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