To provide a method for manufacturing an organic transistor, capable of improving the smoothness of the interface of a gate insulating layer and an organic semiconductor layer and obtaining satisfactory transistor characteristics.
This organic transistor is manufactured by: a gate electrode formation process for forming a gate electrode 3 on a substrate 2; a gate insulating layer formation process for forming a gate insulating layer 4 on the gate electrode 3; a cleaning process for cleaning the surface of the gate insulating layer 4; a smoothed layer formation process for forming a smoothed layer 5 by applying a coating solution for forming a smoothed layer on the washed gate insulating layer 4; an organic semiconductor layer formation process for forming an organic semiconductor layer 8 on the smoothed layer; and a source/drain electrode formation process for forming a source electrode 6 and a drain electrode 7 so that they can be brought into contact with the organic semiconductor layer 8, with a channel region 13 interposed therebetween.
SARUWATARI NAOKO
MAEDA HIROMI
| JP2008034529A | 2008-02-14 | |||
| JP2007071928A | 2007-03-22 |
| WO2006098416A1 | 2006-09-21 |
Kishimoto Tatsuto