Title:
酸化物半導体膜の製造方法
Document Type and Number:
Japanese Patent JP7066658
Kind Code:
B2
Abstract:
To provide a manufacturing method of oxide semiconductor film, capable of controlling and enhancing activation of dopant, and capable of obtaining an oxide semiconductor film having low electrical resistance.SOLUTION: In a manufacturing method of oxide semiconductor film where mist, produced by atomizing or dropletizing a raw material solution containing at least gallium and a dopant, is transported by using carrier gas, and deposition is carried out by heating the mist and causing thermal reaction thereof on a board, the dopant containing at least divalent tin (Sn(II)) is used as the dopant, mixed gas of inert gas and oxidizing gas is used as the carrier gas, and the ratio of flow quantity of the oxidizing gas to flow quantity of the inert gas (oxidizing gas/inert gas) is set less than the ratio of content of the oxidizing gas to the content of the inert gas (oxidizing gas/inert gas) in the air.SELECTED DRAWING: Figure 1
Inventors:
Takenori Watanabe
Application Number:
JP2019111056A
Publication Date:
May 13, 2022
Filing Date:
June 14, 2019
Export Citation:
Assignee:
Shin-Etsu Chemical Co., Ltd.
International Classes:
H01L21/365; C23C16/40; C23C16/448; H01L21/368
Domestic Patent References:
| JP2017069424A | ||||
| JP2003273030A | ||||
| JP2020198410A |
Attorney, Agent or Firm:
Mikio Yoshimiya
Toshihiro Kobayashi
Toshihiro Kobayashi
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