To provide a method for manufacturing a perovskite oxide layer, a method for manufacturing a ferroelectric memory and a method for manufacturing a surface wave elastic wave element, wherein an interface with an electrode layer is excellent.
The method for manufacturing the perovskite oxide layer contains the steps of forming a first oxide layer 22 composed of perovskite oxide on a substrate 10; forming a second oxide layer 24 composed of at least one layer of a perovskite oxide layer crystallized at a lower temperature than a crystallization temperature of the first oxide layer 22 on the first oxide layer 22, and a pyrochlore layer having the same element as the perovskite oxide; forming an electrode layer 30 on the second oxide layer 24; and making a heat treatment.
Mitsue Obuchi
Tatsuya Ina
Takekoshi Noboru
Next Patent: METHOD OF MANUFACTURING SEMICONDUCTOR CHIP, AND SEMICONDUCTOR CHIP