Title:
METHOD OF MANUFACTURING PHOTO-SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH10135563
Kind Code:
A
Abstract:
To make feasible of manufacturing a photo-semiconductor device having semiconductor layer made of a plurality of regions in different layer thickness and excellent production efficiency.
Insulating film masks 2 with striped aperture parts 20 made of a plurality of regions in different widths exposing a substrate 1 on the bottoms thereof are formed on a substrate 1. Next, after wet etching the substrate 1 using the insulating masks 2, an n type InP lower clad layer 3, an undoped InGaAsP active layer 4 and a p type upper clad layer 5 are successively led to crystal growth on the substrate 1 also using the insulating masks 2.
Inventors:
OCHI SEIJI
MINAMI HIROYUKI
ITAGAKI TAKUSHI
MINAMI HIROYUKI
ITAGAKI TAKUSHI
Application Number:
JP28869996A
Publication Date:
May 22, 1998
Filing Date:
October 30, 1996
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01S5/00; (IPC1-7): H01S3/18
Attorney, Agent or Firm:
Kenichi Hayase
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