To provide a method for manufacturing a photomask and a pattern by which degeneracy of lines in an isolated fine exposure pattern can be easily improved and reliability is improved, and to provide a semiconductor device.
A reticle 11 made of a glass substrate as a photomask is provided with a light shielding film pattern 12 relating to formation of elements and integrated circuits on a semiconductor wafer as well as with an auxiliary pattern 13 which corrects degeneracy of lines due to influences of the optical proximity effect during exposure in an isolated pattern P1 in at least a sparse pattern region, as shown in Figures (a) and (b). The auxiliary pattern 13 comprises a pattern for correcting the optical proximity effect by engraving a specified region of the reticle 11 in such a manner that the pattern is parallel to at least a specified line part. The auxiliary pattern 13 forms an etching region where the profile of light to compensate the diffracted part of light on the line edge is controlled as shown in Fig. (c).
Fujitsuna Hideyoshi
Osamu Suzawa