Title:
METHOD FOR MANUFACTURING RESISTANCE CHANGE TYPE MEMORY DEVICE
Document Type and Number:
Japanese Patent JP2021108342
Kind Code:
A
Abstract:
To propose a method that can suppress the destruction of the resistance change layer and manufacture a resistance change type memory device with higher yield.SOLUTION: In a method for manufacturing a resistance change type memory device having a memory cell in which a resistance change layer having carbon nanotubes is sandwiched between an upper electrode and a lower electrode, the patterning of the upper electrode is performed by etching the upper electrode with an etching method that does not generate a potential difference between the upper electrode and the lower electrode due to charge-up of the upper electrode.SELECTED DRAWING: None
Inventors:
KOJIRI HISASHI
TERAMOTO AKINOBU
TERAMOTO AKINOBU
Application Number:
JP2019239472A
Publication Date:
July 29, 2021
Filing Date:
December 27, 2019
Export Citation:
Assignee:
NIPPON ZEON CO
UNIV TOHOKU
UNIV TOHOKU
International Classes:
H01L21/8239; H01L27/105; H01L45/00; H01L49/00
Attorney, Agent or Firm:
Kenji Sugimura
Mitsutsugu Sugimura
Yuta Terashima
Mitsutsugu Sugimura
Yuta Terashima