Title:
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2001332535
Kind Code:
A
Abstract:
To form a desired hole or groove pattern without using a stopper film or without remarkably increasing the number of manufacturing processes.
In an etching process where etching is advanced by the irradiation of UV light and the absorption of etching gas, only a designated cell in a matrix UV light source L1 is lighted and the desired area of not more than a chip size on a semiconductor wafer is irradiated with UV light 5. Then, a material to be etched is selectively worked.
Inventors:
MITSUYA HARUHITO
KAWASAKI HIROMICHI
KAWASAKI HIROMICHI
Application Number:
JP2000154090A
Publication Date:
November 30, 2001
Filing Date:
May 25, 2000
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L21/302; H01L21/3065; H01L21/3213; H01L21/768; H01L21/8238; H01L27/092; (IPC1-7): H01L21/3065; H01L21/3213; H01L21/768; H01L21/8238; H01L27/092
Attorney, Agent or Firm:
Yamato Tsutsui
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