METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Title:

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JP2002329668

Kind Code:

A

Abstract:

To solve the problem that a method performed by irradiating laser beams is mentioned as a method for crystallizing a semiconductor film, but when laser beams are irradiated on the semiconductor film, the semiconductor film is instantaneously melted and partly expanded, or as a temperature gradient of a substrate and the semiconductor film is steep, the semiconductor film is distorted and the quality of the resulting crystalline semiconductor film is reduced.

After being crystallized with laser beams with respect to a semiconductor film, the semiconductor film is heated by a heat treatment, so that a distortion of the semiconductor film is decreased. Irradiation with the laser beams causes partial heating, while the heat treatment wholly heats the substrate and the semiconductor film. Thus, a distortion formed in the semiconductor film is decreased and physical properties of the semiconductor film can be raised.

Inventors:

YAMAZAKI SHUNPEI
MITSUKI TORU
TAKANO YOSHIE

Application Number:

JP2002048755A

Publication Date:

November 15, 2002

Filing Date:

February 25, 2002

Export Citation:

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Assignee:

SEMICONDUCTOR ENERGY LAB

International Classes:

G02F1/1368; H01L21/20; H01L21/26; H01L21/268; H01L21/324; H01L21/336; H01L29/786; (IPC1-7): H01L21/20; G02F1/1368; H01L21/26; H01L21/268; H01L21/324; H01L21/336; H01L29/786

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