Title:
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2005191034
Kind Code:
A
Abstract:
To prevent a short circuit between Cu wiring from occurring by substantially completely removing a Cu retained on an insulating film between the wiring after chemical mechanical polishing.
A method of manufacturing a semiconductor device includes steps of: ozone water treating a Cu film retained on the insulating film between the wires to an oxidized Cu after the chemical mechanical polishing; and removing, by etching, the oxidized Cu with inorganic acid or organic acid treating.
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Inventors:
OTSUKA HIDEKI
MIYATA TAKESHI
KAWABATA YUJI
MATSUMOTO MUNEYUKI
KONO HIROSHI
MIYATA TAKESHI
KAWABATA YUJI
MATSUMOTO MUNEYUKI
KONO HIROSHI
Application Number:
JP2003426827A
Publication Date:
July 14, 2005
Filing Date:
December 24, 2003
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01L21/3205; H01L21/304; H01L21/306; H01L23/52; (IPC1-7): H01L21/3205; H01L21/304; H01L21/306
Attorney, Agent or Firm:
Fumio Iwahashi
Tomoyasu Sakaguchi
Hiroki Naito
Tomoyasu Sakaguchi
Hiroki Naito