Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2005197474
Kind Code:
A
Abstract:
To appropriately control the trench formation process in a semiconductor manufacturing method.
The laminated film of a pad oxide film 12 and a silicon nitride film 13 is deposited on a silicon substrate 11, and a polysilicon film 14 is formed on the laminated film. The polysilicon film 14, the silicon nitride film 13, and the pad oxide film 12 are successively etched through a resist mask 15. The silicon substrate 11 is then etched for the formation of a trench 16 with the polysilicon film 14 serving as the mask.
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Inventors:
SHIMIZU NORIMITSU
KOIKE OSAMU
KOIKE OSAMU
Application Number:
JP2004002407A
Publication Date:
July 21, 2005
Filing Date:
January 07, 2004
Export Citation:
Assignee:
OKI ELECTRIC IND CO LTD
MIYAGI OKI ELECTRIC CO LTD
MIYAGI OKI ELECTRIC CO LTD
International Classes:
H01L21/3065; H01L21/308; H01L21/311; H01L21/76; (IPC1-7): H01L21/3065; H01L21/76
Attorney, Agent or Firm:
Kenji Onishi
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