To provide a mark profile that can realize high accuracy and stable alignment.

The method of manufacturing a semiconductor device comprises the steps of forming a silicon oxide film 12 on a silicon substrate 11 and forming a contact hole penetrating the silicon oxide film and an alignment mark for alignment by etching; depositing a first conductive film 13 in the contact hole as an embedded member; planarizing the first conductive film by a chemical-mechanical polishing (CMP) method, until the silicon oxide film 12 is exposed; and depositing a second conductive film 14 for use as a wiring member. In the method of manufacturing the semiconductor device, when the thickness of the first conductive film is to be set to Ta (m), the thickness of the second conductive film is Tb (m); and the width of the alignment mark is W (m); and the alignment mark is formed with the mark width W that satisfies (Ta+Tb)2W((Ta+Tb)2+1).