Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2015103581
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which enables the reduction in the influence of a void even if the void is produced between a die bond film and an object to adhere to.SOLUTION: A method for manufacturing a semiconductor device comprises: the step of preparing a thermosetting die bond film which includes thermally conductive particles having a thermal conductivity of 12 W/m K or more and accounting for 75 wt.% or more to the total weight of the thermosetting die bond film, and which has a post-heat curing thermal conductivity of 1 W/m K or more; the die-bonding step of performing a die-bonding of a semiconductor chip onto an object to adhere to through the thermosetting die bond film; and the thermally curing step of thermally curing the thermosetting die bond film by heating it under a pressure of 1-20 kg/cmat a heating temperature of 80-200°C for a heating time within a range of 0.1-24 hours.
Inventors:
KIMURA TAKEHIRO
MISUMI SADAHITO
ONISHI KENJI
SUGAO YUKI
SHISHIDO YUICHIRO
MISUMI SADAHITO
ONISHI KENJI
SUGAO YUKI
SHISHIDO YUICHIRO
Application Number:
JP2013241307A
Publication Date:
June 04, 2015
Filing Date:
November 21, 2013
Export Citation:
Assignee:
NITTO DENKO CORP
International Classes:
H01L21/52; H01L23/373
Attorney, Agent or Firm:
Patent Business Corporation Unias International Patent Office