Title:
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2015118972
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To prevent occurrence of a defect in a charge storage film due to heat stress caused by thermal oxidation for forming the thick gate insulation film of a high breakdown voltage MOSFET, in a method of manufacturing a semiconductor device including a FET for nonvolatile memory having a charge storage film in the gate insulation film, and MOSFETs of high breakdown voltage and low breakdown voltage.SOLUTION: A trench of a predetermined depth is formed in a region on a semiconductor substrate where a high breakdown voltage MOSFET is formed, and an oxide film becoming the gate insulation film of the high breakdown voltage MOSFET is formed in the trench thus formed by thermal oxidation. Subsequently, the gate electrode film of a low breakdown voltage MOSFET is formed on the entire surface of the semiconductor substrate. Thereafter, a region where a FET for nonvolatile memory is formed is opened to expose the semiconductor surface of the semiconductor substrate, and a charge storage 3 layer film is formed by depositing a first potential barrier film, a charge storage film and a second potential barrier film sequentially. The gate electrode film of FET for nonvolatile memory is deposited on the charge storage 3 layer film thus formed.
Inventors:
ISHIDA HIROSHI
SATO KAZUHIKO
SATO KAZUHIKO
Application Number:
JP2013259908A
Publication Date:
June 25, 2015
Filing Date:
December 17, 2013
Export Citation:
Assignee:
SYNAPTICS DISPLAY DEVICE LLC
International Classes:
H01L21/336; H01L21/8234; H01L21/8247; H01L27/088; H01L27/10; H01L27/115; H01L29/788; H01L29/792
Attorney, Agent or Firm:
Shizuyo Tamamura
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