Title:
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3859470
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To allow forming a device isolation film having desired uniform film thickness.
SOLUTION: In a method of manufacturing a semiconductor device comprising a trench filled with an embedding material, the trench is formed by steps of forming a mask which opens an area where the trench is formed, etching the substrate using the mask to form the trench, filling the trench with the embedding material, polishing the entire surface of the trench using an abrasive, and removing the mask. The mask is provided with an end point detection layer at an area where polishing is to be terminated in the polishing process, and the polishing is performed with a change in coherent light due to exposure of the end point detection layer as the end point while measuring the coherent wave by irradiating light to the mask. In this manner, it becomes possible to form a device isolation film having desired uniform film thickness.
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Inventors:
Hiroshi Iwata
Application Number:
JP2001235208A
Publication Date:
December 20, 2006
Filing Date:
August 02, 2001
Export Citation:
Assignee:
Sharp Corporation
International Classes:
H01L21/76; H01L21/304; (IPC1-7): H01L21/76; H01L21/304
Domestic Patent References:
| JP9306985A | ||||
| JP2000156360A | ||||
| JP11145090A | ||||
| JP10313051A |
Attorney, Agent or Firm:
Shintaro Nogawa