Title:
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5856416
Kind Code:
A
Abstract:
PURPOSE:To compensate in-plane ununiformity of the impurity amount and to make operating conditions of the circuit elements constant in the plane by a method wherein the irradiation density of an ion beam is varied in accordance with the distribution state of impurities within a wafer thereby to effect ion implantation. CONSTITUTION:Prior to execute ion implantation in the process of manufacturing compound semiconductors consisted of III-V groups in a preiodic table of elements, semiconductor wafers are drawn out each by each or in several number and in-plane distribution of the impurity amount within the wafer is measured. Based on thus obtained data relating to the relationship between locations in the wafer plane and the impurity amount, a scanner for an ion implanting device or a wafer stage is externally controlled to effect ion implantation. This ion implantation is performed for each wafer. As to an X-Y scanning means, an X-axis deflector and a Y-axis deflector are used, and high voltage with a distorted triangular waveform is applied to each of the deflectors.
Inventors:
BABA YASUO
NISHI HIDETOSHI
NISHI HIDETOSHI
Application Number:
JP15504981A
Publication Date:
April 04, 1983
Filing Date:
September 30, 1981
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L21/66; H01L21/265; (IPC1-7): H01L21/66
Attorney, Agent or Firm:
Koshiro Matsuoka