Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENTS USING METAL LIFT-OFF PROCESS, AND SEMICONDUCTOR ELEMENT MANUFACTURED BY THAT METHOD
Document Type and Number:
Japanese Patent JP2022161792
Kind Code:
A
Abstract:
To provide a method for manufacturing semiconductor elements using a metal lift-off process, and a semiconductor element manufactured by the method.SOLUTION: The method includes coating with a photoresist, exposure and development, then coating with a metal layer, and removal of the photoresist layer with a photoresist stripper. The metal on the top of the photoresist layer is removed when the photoresist layer is removed. An etching process is not required. The circuit layout required for the semiconductor element is thus completed. In addition, by setting process parameters, the contour of the photoresist layer presents a certain angle, so that the metal on the surface of the photoresist layer is completely removed, thereby achieving the effect of cost reduction and improvement in competitiveness.SELECTED DRAWING: Figure 2
Inventors:
TSOU CHENG-HSING
CHAO TAH SIANG
HU JUNG SEN
CHAO TAH SIANG
HU JUNG SEN
Application Number:
JP2021131936A
Publication Date:
October 21, 2022
Filing Date:
August 13, 2021
Export Citation:
Assignee:
KINGRAY TECH CO LTD
International Classes:
G03F7/26; G03F7/20; H01L21/027; H05K3/02
Domestic Patent References:
| JP2021508072A | 2021-02-25 |
Foreign References:
| WO2011102064A1 | 2011-08-25 |
Attorney, Agent or Firm:
Takeshi Ebe
Kazuo Asahi
Kazuo Asahi