To provide a semiconductor laser, using a nitride-based III-V group compound semiconductor, which can have an end surface window structure formed extremely easily, can suppress optical waveguide loss, can suppress light absorption and local heat generation in laser operation due to presence of a surface level, and is high in a manufacturing yield and excellent in a shape of a far-field image; and to provide a method of manufacturing the semiconductor laser.
A groove 16 is formed near at least the formation position of the end surface window structure of an n-type GaN substrate 11. The width, shape, position, etc. of the groove 16 are determined by design. On the n-type GaN substrate 11 in which the groove 16 is formed, a GaN-based semiconductor layer 25 which includes an active layer 19 formed of a nitride-based III-V group compound semiconductor including In and Ga is grown to manufacturer a GaN-based semiconductor laser having the end surface window structure. It is preferable that a recessed part formed at a part over the groove 16 is filled with an insulator.
KURAMOTO MASARU
GOTO OSAMU
Masaaki Yoshii
Takahisa Yamamoto